CA1175953A - Planar structure for high voltage semiconductor devices with gaps in glassy layer over high field regions - Google Patents
Planar structure for high voltage semiconductor devices with gaps in glassy layer over high field regionsInfo
- Publication number
- CA1175953A CA1175953A CA000389424A CA389424A CA1175953A CA 1175953 A CA1175953 A CA 1175953A CA 000389424 A CA000389424 A CA 000389424A CA 389424 A CA389424 A CA 389424A CA 1175953 A CA1175953 A CA 1175953A
- Authority
- CA
- Canada
- Prior art keywords
- layer
- chip
- gaps
- silox
- guard ring
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired
Links
- 239000004065 semiconductor Substances 0.000 title claims abstract description 21
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 claims abstract description 37
- 230000005684 electric field Effects 0.000 claims abstract description 34
- 235000012239 silicon dioxide Nutrition 0.000 claims abstract description 17
- 239000000377 silicon dioxide Substances 0.000 claims abstract description 17
- 230000010287 polarization Effects 0.000 claims abstract description 14
- 239000000463 material Substances 0.000 claims abstract description 11
- OAICVXFJPJFONN-UHFFFAOYSA-N Phosphorus Chemical compound [P] OAICVXFJPJFONN-UHFFFAOYSA-N 0.000 claims description 12
- 238000009413 insulation Methods 0.000 claims description 12
- 229910052698 phosphorus Inorganic materials 0.000 claims description 12
- 239000011574 phosphorus Substances 0.000 claims description 12
- 230000000694 effects Effects 0.000 claims description 10
- 239000012774 insulation material Substances 0.000 claims description 4
- 229910021421 monocrystalline silicon Inorganic materials 0.000 claims description 3
- 230000005669 field effect Effects 0.000 claims 2
- 238000007789 sealing Methods 0.000 claims 2
- 230000002411 adverse Effects 0.000 claims 1
- 239000011248 coating agent Substances 0.000 abstract description 8
- 238000000576 coating method Methods 0.000 abstract description 8
- 229960001866 silicon dioxide Drugs 0.000 abstract 1
- 229910021420 polycrystalline silicon Inorganic materials 0.000 description 34
- 229920005591 polysilicon Polymers 0.000 description 33
- 239000000758 substrate Substances 0.000 description 11
- 238000000034 method Methods 0.000 description 10
- 239000002131 composite material Substances 0.000 description 9
- 238000009792 diffusion process Methods 0.000 description 9
- 238000004519 manufacturing process Methods 0.000 description 8
- 229910052751 metal Inorganic materials 0.000 description 8
- 239000002184 metal Substances 0.000 description 8
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 7
- 229910052710 silicon Inorganic materials 0.000 description 7
- 239000010703 silicon Substances 0.000 description 7
- 230000008901 benefit Effects 0.000 description 4
- 230000015572 biosynthetic process Effects 0.000 description 3
- 241000478345 Afer Species 0.000 description 2
- 230000015556 catabolic process Effects 0.000 description 2
- 239000012535 impurity Substances 0.000 description 2
- 229910052814 silicon oxide Inorganic materials 0.000 description 2
- ZOXJGFHDIHLPTG-UHFFFAOYSA-N Boron Chemical compound [B] ZOXJGFHDIHLPTG-UHFFFAOYSA-N 0.000 description 1
- 241000905957 Channa melasoma Species 0.000 description 1
- 235000003332 Ilex aquifolium Nutrition 0.000 description 1
- 235000002296 Ilex sandwicensis Nutrition 0.000 description 1
- 235000002294 Ilex volkensiana Nutrition 0.000 description 1
- 208000003251 Pruritus Diseases 0.000 description 1
- 238000007792 addition Methods 0.000 description 1
- 229910052782 aluminium Inorganic materials 0.000 description 1
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 1
- 229910052796 boron Inorganic materials 0.000 description 1
- 238000010276 construction Methods 0.000 description 1
- 230000008021 deposition Effects 0.000 description 1
- 238000005530 etching Methods 0.000 description 1
- 239000011521 glass Substances 0.000 description 1
- 150000002500 ions Chemical class 0.000 description 1
- 230000007803 itching Effects 0.000 description 1
- CNQCVBJFEGMYDW-UHFFFAOYSA-N lawrencium atom Chemical compound [Lr] CNQCVBJFEGMYDW-UHFFFAOYSA-N 0.000 description 1
- 230000002028 premature Effects 0.000 description 1
- 239000011253 protective coating Substances 0.000 description 1
- 229910021332 silicide Inorganic materials 0.000 description 1
- FVBUAEGBCNSCDD-UHFFFAOYSA-N silicide(4-) Chemical compound [Si-4] FVBUAEGBCNSCDD-UHFFFAOYSA-N 0.000 description 1
- 241000894007 species Species 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
- H10D30/00—Field-effect transistors [FET]
- H10D30/60—Insulated-gate field-effect transistors [IGFET]
- H10D30/64—Double-diffused metal-oxide semiconductor [DMOS] FETs
- H10D30/66—Vertical DMOS [VDMOS] FETs
- H10D30/665—Vertical DMOS [VDMOS] FETs having edge termination structures
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L23/00—Details of semiconductor or other solid state devices
- H01L23/28—Encapsulations, e.g. encapsulating layers, coatings, e.g. for protection
- H01L23/31—Encapsulations, e.g. encapsulating layers, coatings, e.g. for protection characterised by the arrangement or shape
- H01L23/3157—Partial encapsulation or coating
- H01L23/3171—Partial encapsulation or coating the coating being directly applied to the semiconductor body, e.g. passivation layer
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L23/00—Details of semiconductor or other solid state devices
- H01L23/58—Structural electrical arrangements for semiconductor devices not otherwise provided for, e.g. in combination with batteries
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
- H10D12/00—Bipolar devices controlled by the field effect, e.g. insulated-gate bipolar transistors [IGBT]
- H10D12/411—Insulated-gate bipolar transistors [IGBT]
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
- H10D18/00—Thyristors
- H10D18/80—Bidirectional devices, e.g. triacs
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
- H10D30/00—Field-effect transistors [FET]
- H10D30/60—Insulated-gate field-effect transistors [IGFET]
- H10D30/64—Double-diffused metal-oxide semiconductor [DMOS] FETs
- H10D30/645—Bidirectional devices
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
- H10D30/00—Field-effect transistors [FET]
- H10D30/60—Insulated-gate field-effect transistors [IGFET]
- H10D30/64—Double-diffused metal-oxide semiconductor [DMOS] FETs
- H10D30/65—Lateral DMOS [LDMOS] FETs
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
- H10D30/00—Field-effect transistors [FET]
- H10D30/60—Insulated-gate field-effect transistors [IGFET]
- H10D30/64—Double-diffused metal-oxide semiconductor [DMOS] FETs
- H10D30/66—Vertical DMOS [VDMOS] FETs
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
- H10D62/00—Semiconductor bodies, or regions thereof, of devices having potential barriers
- H10D62/10—Shapes, relative sizes or dispositions of the regions of the semiconductor bodies; Shapes of the semiconductor bodies
- H10D62/102—Constructional design considerations for preventing surface leakage or controlling electric field concentration
- H10D62/103—Constructional design considerations for preventing surface leakage or controlling electric field concentration for increasing or controlling the breakdown voltage of reverse-biased devices
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
- H10D64/00—Electrodes of devices having potential barriers
- H10D64/111—Field plates
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
- H10D64/00—Electrodes of devices having potential barriers
- H10D64/118—Electrodes comprising insulating layers having particular dielectric or electrostatic properties, e.g. having static charges
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/0001—Technical content checked by a classifier
- H01L2924/0002—Not covered by any one of groups H01L24/00, H01L24/00 and H01L2224/00
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/10—Details of semiconductor or other solid state devices to be connected
- H01L2924/11—Device type
- H01L2924/13—Discrete devices, e.g. 3 terminal devices
- H01L2924/1304—Transistor
- H01L2924/1306—Field-effect transistor [FET]
- H01L2924/13091—Metal-Oxide-Semiconductor Field-Effect Transistor [MOSFET]
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
- H10D62/00—Semiconductor bodies, or regions thereof, of devices having potential barriers
- H10D62/10—Shapes, relative sizes or dispositions of the regions of the semiconductor bodies; Shapes of the semiconductor bodies
- H10D62/124—Shapes, relative sizes or dispositions of the regions of semiconductor bodies or of junctions between the regions
- H10D62/126—Top-view geometrical layouts of the regions or the junctions
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
- H10D62/00—Semiconductor bodies, or regions thereof, of devices having potential barriers
- H10D62/10—Shapes, relative sizes or dispositions of the regions of the semiconductor bodies; Shapes of the semiconductor bodies
- H10D62/124—Shapes, relative sizes or dispositions of the regions of semiconductor bodies or of junctions between the regions
- H10D62/126—Top-view geometrical layouts of the regions or the junctions
- H10D62/127—Top-view geometrical layouts of the regions or the junctions of cellular field-effect devices, e.g. multicellular DMOS transistors or IGBTs
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
- H10D62/00—Semiconductor bodies, or regions thereof, of devices having potential barriers
- H10D62/10—Shapes, relative sizes or dispositions of the regions of the semiconductor bodies; Shapes of the semiconductor bodies
- H10D62/13—Semiconductor regions connected to electrodes carrying current to be rectified, amplified or switched, e.g. source or drain regions
- H10D62/149—Source or drain regions of field-effect devices
- H10D62/151—Source or drain regions of field-effect devices of IGFETs
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
- H10D62/00—Semiconductor bodies, or regions thereof, of devices having potential barriers
- H10D62/10—Shapes, relative sizes or dispositions of the regions of the semiconductor bodies; Shapes of the semiconductor bodies
- H10D62/13—Semiconductor regions connected to electrodes carrying current to be rectified, amplified or switched, e.g. source or drain regions
- H10D62/149—Source or drain regions of field-effect devices
- H10D62/151—Source or drain regions of field-effect devices of IGFETs
- H10D62/156—Drain regions of DMOS transistors
- H10D62/157—Impurity concentrations or distributions
Landscapes
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Engineering & Computer Science (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Electrodes Of Semiconductors (AREA)
- Insulated Gate Type Field-Effect Transistor (AREA)
- Formation Of Insulating Films (AREA)
- Bipolar Transistors (AREA)
Applications Claiming Priority (2)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| US06/207,123 US4412242A (en) | 1980-11-17 | 1980-11-17 | Planar structure for high voltage semiconductor devices with gaps in glassy layer over high field regions |
| US207,123 | 1980-11-17 |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| CA1175953A true CA1175953A (en) | 1984-10-09 |
Family
ID=22769286
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CA000389424A Expired CA1175953A (en) | 1980-11-17 | 1981-11-04 | Planar structure for high voltage semiconductor devices with gaps in glassy layer over high field regions |
Country Status (9)
| Country | Link |
|---|---|
| US (1) | US4412242A (en]) |
| JP (3) | JPS57112034A (en]) |
| CA (1) | CA1175953A (en]) |
| CH (1) | CH656255A5 (en]) |
| DE (1) | DE3145231C3 (en]) |
| FR (1) | FR2494499A1 (en]) |
| GB (1) | GB2087648B (en]) |
| IT (1) | IT1196932B (en]) |
| SE (1) | SE462309B (en]) |
Families Citing this family (74)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US4412242A (en) | 1980-11-17 | 1983-10-25 | International Rectifier Corporation | Planar structure for high voltage semiconductor devices with gaps in glassy layer over high field regions |
| JPS57160159A (en) * | 1981-03-28 | 1982-10-02 | Toshiba Corp | High breakdown voltage planar type semiconductor device |
| US4677452A (en) * | 1981-10-26 | 1987-06-30 | Intersil, Inc. | Power field-effect transistor structures |
| US4574209A (en) * | 1982-06-21 | 1986-03-04 | Eaton Corporation | Split gate EFET and circuitry |
| JPS5939066A (ja) * | 1982-08-27 | 1984-03-03 | Hitachi Ltd | 半導体集積回路 |
| US4532534A (en) * | 1982-09-07 | 1985-07-30 | Rca Corporation | MOSFET with perimeter channel |
| JPS5976466A (ja) * | 1982-10-25 | 1984-05-01 | Mitsubishi Electric Corp | プレ−ナ形半導体装置 |
| US4974059A (en) * | 1982-12-21 | 1990-11-27 | International Rectifier Corporation | Semiconductor high-power mosfet device |
| DE3346286A1 (de) * | 1982-12-21 | 1984-06-28 | International Rectifier Corp., Los Angeles, Calif. | Hochleistungs-metalloxid-feldeffekttransistor- halbleiterbauteil |
| NL8302092A (nl) * | 1983-06-13 | 1985-01-02 | Philips Nv | Halfgeleiderinrichting bevattende een veldeffekttransistor. |
| JPS6042855A (ja) * | 1983-08-19 | 1985-03-07 | Hitachi Ltd | 半導体装置 |
| NL8401117A (nl) * | 1984-04-09 | 1985-11-01 | Philips Nv | Halfgeleiderinrichting met veldeffekttransistors met geisoleerde poortelektrode. |
| GB2165090A (en) * | 1984-09-26 | 1986-04-03 | Philips Electronic Associated | Improving the field distribution in high voltage semiconductor devices |
| US4631564A (en) * | 1984-10-23 | 1986-12-23 | Rca Corporation | Gate shield structure for power MOS device |
| EP0222326A2 (en) * | 1985-11-12 | 1987-05-20 | General Electric Company | Method of fabricating an improved insulated gate semiconductor device |
| JP2565317B2 (ja) * | 1986-12-03 | 1996-12-18 | 富士通株式会社 | 半導体装置の製造方法 |
| US4789886A (en) * | 1987-01-20 | 1988-12-06 | General Instrument Corporation | Method and apparatus for insulating high voltage semiconductor structures |
| US4881106A (en) * | 1988-05-23 | 1989-11-14 | Ixys Corporation | DV/DT of power MOSFETS |
| US5003372A (en) * | 1988-06-16 | 1991-03-26 | Hyundai Electronics Industries Co., Ltd. | High breakdown voltage semiconductor device |
| US5192993A (en) * | 1988-09-27 | 1993-03-09 | Kabushiki Kaisha Toshiba | Semiconductor device having improved element isolation area |
| JPH0783123B2 (ja) * | 1988-12-08 | 1995-09-06 | 富士電機株式会社 | Ｍｏｓ型半導体装置 |
| US5270566A (en) * | 1988-12-08 | 1993-12-14 | Fuji Electric Co., Ltd. | Insulated gate semiconductor device |
| JPH02170469A (ja) * | 1988-12-22 | 1990-07-02 | Fuji Electric Co Ltd | 半導体装置 |
| JP2550702B2 (ja) * | 1989-04-26 | 1996-11-06 | 日本電装株式会社 | 電力用半導体素子 |
| US4994891A (en) * | 1989-06-20 | 1991-02-19 | Advanced Micro Devices | Shielded transistor device |
| EP0460251B1 (de) * | 1990-06-05 | 1998-11-18 | Siemens Aktiengesellschaft | Herstellverfahren für einen Leistungs-MISFET |
| US5404040A (en) * | 1990-12-21 | 1995-04-04 | Siliconix Incorporated | Structure and fabrication of power MOSFETs, including termination structures |
| WO1992016998A1 (en) | 1991-03-18 | 1992-10-01 | Quality Semiconductor, Inc. | Fast transmission gate switch |
| US6208195B1 (en) | 1991-03-18 | 2001-03-27 | Integrated Device Technology, Inc. | Fast transmission gate switch |
| IT1250233B (it) * | 1991-11-29 | 1995-04-03 | St Microelectronics Srl | Procedimento per la fabbricazione di circuiti integrati in tecnologia mos. |
| US5323036A (en) * | 1992-01-21 | 1994-06-21 | Harris Corporation | Power FET with gate segments covering drain regions disposed in a hexagonal pattern |
| US5366932A (en) * | 1993-04-26 | 1994-11-22 | Harris Corporation | Semi-conductor chip packaging method and semi-conductor chip having interdigitated gate runners with gate bonding pads |
| US5396097A (en) * | 1993-11-22 | 1995-03-07 | Motorola Inc | Transistor with common base region |
| DE69321966T2 (de) * | 1993-12-24 | 1999-06-02 | Consorzio Per La Ricerca Sulla Microelettronica Nel Mezzogiorno, Catania | Leistungs-Halbleiterbauelement |
| DE69321965T2 (de) * | 1993-12-24 | 1999-06-02 | Consorzio Per La Ricerca Sulla Microelettronica Nel Mezzogiorno, Catania | MOS-Leistungs-Chip-Typ und Packungszusammenbau |
| US5798287A (en) * | 1993-12-24 | 1998-08-25 | Consorzio Per La Ricerca Sulla Microelettronica Nel Mezzogiorno | Method for forming a power MOS device chip |
| JPH07326743A (ja) | 1994-05-31 | 1995-12-12 | Fuji Electric Co Ltd | プレーナ型半導体素子 |
| EP0689238B1 (en) * | 1994-06-23 | 2002-02-20 | STMicroelectronics S.r.l. | MOS-technology power device manufacturing process |
| US5817546A (en) * | 1994-06-23 | 1998-10-06 | Stmicroelectronics S.R.L. | Process of making a MOS-technology power device |
| EP1408542A3 (en) * | 1994-07-14 | 2009-01-21 | STMicroelectronics S.r.l. | High-speed MOS-technology power device integrated structure, and related manufacturing process |
| DE69418037T2 (de) * | 1994-08-02 | 1999-08-26 | Consorzio Per La Ricerca Sulla Microelettronica Ne | Leistungshalbleitervorrichtung aus MOS-Technology-Chips und Gehäuseaufbau |
| US5798554A (en) * | 1995-02-24 | 1998-08-25 | Consorzio Per La Ricerca Sulla Microelettronica Nel Mezzogiorno | MOS-technology power device integrated structure and manufacturing process thereof |
| TW344130B (en) | 1995-10-11 | 1998-11-01 | Int Rectifier Corp | Termination structure for semiconductor device and process for its manufacture |
| US5940721A (en) * | 1995-10-11 | 1999-08-17 | International Rectifier Corporation | Termination structure for semiconductor devices and process for manufacture thereof |
| EP0772241B1 (en) | 1995-10-30 | 2004-06-09 | STMicroelectronics S.r.l. | High density MOS technology power device |
| EP0772242B1 (en) * | 1995-10-30 | 2006-04-05 | STMicroelectronics S.r.l. | Single feature size MOS technology power device |
| US6228719B1 (en) | 1995-11-06 | 2001-05-08 | Stmicroelectronics S.R.L. | MOS technology power device with low output resistance and low capacitance, and related manufacturing process |
| EP0782201B1 (en) * | 1995-12-28 | 2000-08-30 | STMicroelectronics S.r.l. | MOS-technology power device integrated structure |
| US5677562A (en) * | 1996-05-14 | 1997-10-14 | General Instrument Corporation Of Delaware | Planar P-N junction semiconductor structure with multilayer passivation |
| EP0817274B1 (en) | 1996-07-05 | 2004-02-11 | STMicroelectronics S.r.l. | Asymmetric MOS technology power device |
| US5994762A (en) * | 1996-07-26 | 1999-11-30 | Hitachi, Ltd. | Semiconductor integrated circuit device including boron-doped phospho silicate glass layer and manufacturing method thereof |
| US5811841A (en) * | 1997-04-03 | 1998-09-22 | The United States Of America As Represented By The Secretary Of The Air Force | Photoconductive switching with thin layer enhanced breakdown charateristics |
| DE69839439D1 (de) | 1998-05-26 | 2008-06-19 | St Microelectronics Srl | MOS-Technologie-Leistungsanordnung mit hoher Integrationsdichte |
| US6022790A (en) * | 1998-08-05 | 2000-02-08 | International Rectifier Corporation | Semiconductor process integration of a guard ring structure |
| JP4644904B2 (ja) * | 2000-04-05 | 2011-03-09 | 住友電気工業株式会社 | パワー半導体素子 |
| GB2373634B (en) | 2000-10-31 | 2004-12-08 | Fuji Electric Co Ltd | Semiconductor device |
| JP5011611B2 (ja) | 2001-06-12 | 2012-08-29 | 富士電機株式会社 | 半導体装置 |
| US6852634B2 (en) * | 2002-06-27 | 2005-02-08 | Semiconductor Components Industries L.L.C. | Low cost method of providing a semiconductor device having a high channel density |
| DE102007020659B4 (de) * | 2007-04-30 | 2012-02-23 | Infineon Technologies Austria Ag | Halbleiterbauelement und Verfahren zur Herstellung desselben |
| JP2009076866A (ja) * | 2007-08-31 | 2009-04-09 | Sumitomo Electric Ind Ltd | ショットキーバリアダイオード |
| US9484451B2 (en) | 2007-10-05 | 2016-11-01 | Vishay-Siliconix | MOSFET active area and edge termination area charge balance |
| JP5272472B2 (ja) * | 2008-03-28 | 2013-08-28 | サンケン電気株式会社 | 半導体装置 |
| WO2013021727A1 (ja) * | 2011-08-05 | 2013-02-14 | 富士電機株式会社 | 半導体装置および半導体装置の製造方法 |
| US9431249B2 (en) | 2011-12-01 | 2016-08-30 | Vishay-Siliconix | Edge termination for super junction MOSFET devices |
| CN103178109A (zh) * | 2011-12-21 | 2013-06-26 | 上海华虹Nec电子有限公司 | 高压隔离型的nldmos结构及其制作方法 |
| US10164043B2 (en) | 2012-01-11 | 2018-12-25 | Infineon Technologies Ag | Semiconductor diode and method for forming a semiconductor diode |
| US9614043B2 (en) | 2012-02-09 | 2017-04-04 | Vishay-Siliconix | MOSFET termination trench |
| US9842911B2 (en) | 2012-05-30 | 2017-12-12 | Vishay-Siliconix | Adaptive charge balanced edge termination |
| US9508596B2 (en) | 2014-06-20 | 2016-11-29 | Vishay-Siliconix | Processes used in fabricating a metal-insulator-semiconductor field effect transistor |
| US9887259B2 (en) | 2014-06-23 | 2018-02-06 | Vishay-Siliconix | Modulated super junction power MOSFET devices |
| CN105244279B (zh) * | 2014-07-10 | 2018-09-25 | 北大方正集团有限公司 | 一种平面型vdmos器件及其制作方法 |
| CN105304701B (zh) * | 2014-08-01 | 2018-06-12 | 旺宏电子股份有限公司 | 半导体装置 |
| CN106575666B (zh) | 2014-08-19 | 2021-08-06 | 维西埃-硅化物公司 | 超结金属氧化物半导体场效应晶体管 |
| US10998418B2 (en) * | 2019-05-16 | 2021-05-04 | Cree, Inc. | Power semiconductor devices having reflowed inter-metal dielectric layers |
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| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CA667423A (en) * | 1963-07-23 | Northern Electric Company Limited | Semiconductor device and method of manufacture | |
| GB921367A (en) * | 1959-04-06 | 1963-03-20 | Standard Telephones Cables Ltd | Semiconductor device and method of manufacture |
| NL297002A (en]) * | 1962-08-23 | 1900-01-01 | ||
| US3518494A (en) * | 1964-06-29 | 1970-06-30 | Signetics Corp | Radiation resistant semiconductor device and method |
| US3489953A (en) * | 1964-09-18 | 1970-01-13 | Texas Instruments Inc | Stabilized integrated circuit and process for fabricating same |
| US3492174A (en) * | 1966-03-19 | 1970-01-27 | Sony Corp | Method of making a semiconductor device |
| US3821779A (en) * | 1966-11-25 | 1974-06-28 | Hitachi Ltd | Semiconductor device with high conductivity and high resistivity collector portions to prevent surface inversion |
| US3497407A (en) * | 1966-12-28 | 1970-02-24 | Ibm | Etching of semiconductor coatings of sio2 |
| US3632433A (en) * | 1967-03-29 | 1972-01-04 | Hitachi Ltd | Method for producing a semiconductor device |
| US3506502A (en) * | 1967-06-05 | 1970-04-14 | Sony Corp | Method of making a glass passivated mesa semiconductor device |
| NL162250C (nl) * | 1967-11-21 | 1980-04-15 | Philips Nv | Halfgeleiderinrichting met een halfgeleiderlichaam, waarvan aan een hoofdoppervlak het halfgeleideroppervlak plaatselijk met een oxydelaag is bedekt, en werkwijze voor het vervaardigen van planaire halfgeleider- inrichtingen. |
| GB1255995A (en) * | 1968-03-04 | 1971-12-08 | Hitachi Ltd | Semiconductor device and method of making same |
| DE1920802A1 (de) * | 1968-05-01 | 1969-11-20 | Itt Ind Gmbh Deutsche | Planar-Diode mit Durchbruch bei hoher Sperrspannung |
| US3560810A (en) * | 1968-08-15 | 1971-02-02 | Ibm | Field effect transistor having passivated gate insulator |
| JPS4743025Y1 (en]) * | 1969-01-25 | 1972-12-26 | ||
| JPS501872B1 (en]) * | 1970-01-30 | 1975-01-22 | ||
| FR2178932A1 (en]) * | 1972-04-03 | 1973-11-16 | Motorola Inc | |
| DE2510922A1 (de) * | 1975-03-13 | 1976-09-30 | Licentia Gmbh | Halbleiteranordnung |
| GB1499845A (en) * | 1975-03-26 | 1978-02-01 | Mullard Ltd | Thyristors |
| JPS5420670A (en) * | 1977-07-18 | 1979-02-16 | Toshiba Corp | Surface stabilizing method of semiconductor elements |
| US4219369A (en) * | 1977-09-30 | 1980-08-26 | Hitachi, Ltd. | Method of making semiconductor integrated circuit device |
| DE2936724A1 (de) * | 1978-09-11 | 1980-03-20 | Tokyo Shibaura Electric Co | Halbleitervorrichtung und verfahren zu ihrer herstellung |
| DK157272C (da) | 1978-10-13 | 1990-04-30 | Int Rectifier Corp | Mosfet med hoej effekt |
| DE3012430A1 (de) * | 1980-03-31 | 1981-10-08 | Siemens AG, 1000 Berlin und 8000 München | Planare halbleiteranordnung mit erhoehter durchbruchsspannung |
| US4593302B1 (en) * | 1980-08-18 | 1998-02-03 | Int Rectifier Corp | Process for manufacture of high power mosfet laterally distributed high carrier density beneath the gate oxide |
| US4412242A (en) | 1980-11-17 | 1983-10-25 | International Rectifier Corporation | Planar structure for high voltage semiconductor devices with gaps in glassy layer over high field regions |
-
1980
- 1980-11-17 US US06/207,123 patent/US4412242A/en not_active Expired - Lifetime
-
1981
- 1981-11-04 CA CA000389424A patent/CA1175953A/en not_active Expired
- 1981-11-09 FR FR8120952A patent/FR2494499A1/fr active Granted
- 1981-11-13 DE DE3145231A patent/DE3145231C3/de not_active Expired - Lifetime
- 1981-11-16 IT IT25123/81A patent/IT1196932B/it active
- 1981-11-16 CH CH7365/81A patent/CH656255A5/de not_active IP Right Cessation
- 1981-11-16 SE SE8106799A patent/SE462309B/sv not_active IP Right Cessation
- 1981-11-17 GB GB8134623A patent/GB2087648B/en not_active Expired
- 1981-11-17 JP JP56184332A patent/JPS57112034A/ja active Granted
-
1996
- 1996-01-11 JP JP8019251A patent/JP2766239B2/ja not_active Expired - Lifetime
- 1996-01-11 JP JP8019252A patent/JP2766240B2/ja not_active Expired - Lifetime
Also Published As
| Publication number | Publication date |
|---|---|
| DE3145231C2 (en]) | 1994-08-11 |
| JPS57112034A (en) | 1982-07-12 |
| FR2494499B1 (en]) | 1984-06-08 |
| FR2494499A1 (fr) | 1982-05-21 |
| CH656255A5 (de) | 1986-06-13 |
| US4412242A (en) | 1983-10-25 |
| GB2087648A (en) | 1982-05-26 |
| JP2766239B2 (ja) | 1998-06-18 |
| IT1196932B (it) | 1988-11-25 |
| SE8106799L (sv) | 1982-05-18 |
| DE3145231C3 (de) | 1994-08-11 |
| JPH08250702A (ja) | 1996-09-27 |
| JPH09199707A (ja) | 1997-07-31 |
| GB2087648B (en) | 1985-02-13 |
| JPH0434311B2 (en]) | 1992-06-05 |
| JP2766240B2 (ja) | 1998-06-18 |
| DE3145231A1 (de) | 1982-06-09 |
| SE462309B (sv) | 1990-05-28 |
| IT8125123A0 (it) | 1981-11-16 |
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